UF3C120080K4S

UF3C120080K4S
Spannung [Vr]
1200V
Strom max [Id]
33A
RDS(on) typ
80 mOhm
Gehäuse
TO-247-4L
Hersteller
United Silicon Carbide
Produktbeschreibung

United Silicon Carbide’s UF3C120080K4S 1200V 80mOhm FET products co-package its high-performance Gen 3 SiC fast JFETs with a FET optimized MOSFET. The device comes in a TO-247-4L package.