• SiC Cascoden FETs

    • UF3C120150B7S

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    UF3C120150B7S
    Spannung [Vr]
    1200V
    Strom max [Id]
    18,4A
    RDS(on) typ
    150 mOhm
    Gehäuse
    D2PAK-7L
    Hersteller
    United Silicon Carbide
    Produktbeschreibung

    The UF3C120150B7S 1200V 150mOhm SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET. The deivce comes in a D2PAK-7L package.

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