UJ3C065030K3S

UJ3C065030K3S
Spannung [Vr]
650V
Strom max [Id]
85A
RDS(on) typ
27 mOhm
Gehäuse
TO-247-3L
Hersteller
United Silicon Carbide
Produktbeschreibung

United Silicon Carbide’s UJ3C065030K3S 650V 27mOhm RDS(on) SiC FET products co-package its high-performance G3 SiC JFETs with a FET optimized MOSFET. The deivce comes in a TO-247-3L package.